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CY7C1911BV18 - (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

CY7C1911BV18_5847856.PDF Datasheet

Part No.

CY7C1911BV18

Description

(CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

File Size

535.56K / 28 Page

Maker

Cypress Semiconductor

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: CY7C1911JV18-300BZC

Maker: Cypress Semiconductor Corp

Pack: ETC

Stock: Reserved

Unit price for :

50: $0.00

100: $0.00

1000: $0.00

Email: oulindz@gmail.com

Homepage

http://www.cypress.com/

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Full text search : (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

Related Part Number

PART	Description	Maker
CY7C1911BV18	(CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture	Cypress Semiconductor
K7R321884M K7R321884M-FC16 K7R321884M-FC20 K7R3218	1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM 1Mx36 & 2Mx18 QDRTM II b4 SRAM	Samsung Electronic SAMSUNG[Samsung semiconductor]
K7S3236T4C-FECI33 K7S3218T4C-FECI33 K7S3236T4C-FEC	1Mx36 & 2Mx18 QDRTM II b4 SRAM	Samsung semiconductor
K7Q163664B10 K7Q161864B	512Kx36 & 1Mx18 QDRTM b4 SRAM	Samsung semiconductor
K7R640982M K7R643682M K7R641882M	2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
CY7C1911CV18	(CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture	Cypress Semiconductor
K7Q161852A	(K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM	Samsung semiconductor
PD46365092BF1-E40-EQ1 PD46365182BF1-E33Y-EQ1 PD463	36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION	Renesas Electronics Corporation
UPD44325092BF5-E33-FQ1 PD44325092B-15	4M X 9 QDR SRAM, 0.45 ns, PBGA165 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION	Renesas Electronics Corporation
CY7C1315AV18-250BZC CY7C1311AV18 CY7C1311AV18-167B	18-Mb QDR(TM)-II SRAM 4-Word Burst Architecture 18-Mb QDRTM-II SRAM 4-Word Burst Architecture	CYPRESS[Cypress Semiconductor]

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